Combined sputter-ion and NEG pumpRÖMER, J. G. M.Vacuum. 1992, Vol 43, Num 5-7, pp 551-553, issn 0042-207XConference Paper

Modeling of mass transport and gas kinetics of the reactive sputtering processBERG, S; NENDER, C.Journal de physique. IV. 1995, Vol 5, Num 5, pp C5.45-C5.54, issn 1155-4339, 1Conference Paper

Synthèse par décharge luminescente radio-fréquence de films minces de Ga_xAs_1-x amorphes : propriétés électriques et optiquesHadidou, Mohamed; Despax, Bernard.1989, 147 p.Thesis

A study of the process pressure influence in reactive sputtering aiming at hysteresis eliminationSÄRHAMMAR, E; STRIJCKMANS, K; NYBERG, T et al.Surface & coatings technology. 2013, Vol 232, pp 357-361, issn 0257-8972, 5 p.Article

Ionenätzen in der Metallographie = Ion etching in metallographyPOHL, M.Zeitschrift für Metallkunde. 1995, Vol 86, Num 1, pp 22-26, issn 0044-3093Article

Criterion analysis on nonpoisoning of the target surfaceJINGYI WANG; WEI CHEN; YU WANG et al.Journal of applied physics. 1993, Vol 73, Num 5, pp 2518-2523, issn 0021-8979Article

CuInSe₂ Photovoltaic devices prepared by reactive sputteringLOMMASSON, T. C; TALIEH, H; MEAKIN, J. D et al.Photovoltaic specialists conference. 19. 1987, pp 1285-1290Conference Paper

Reactive ion beam deposition of aluminum nitride thin filmsBHAT, S; ASHOK, S; FONASH, S. J et al.Journal of electronic materials. 1985, Vol 14, Num 4, pp 405-418, issn 0361-5235Article

Comparison study on structure of Si and Cu doping CrN films by reactive sputteringSHUYONG TAN; XUHAI ZHANG; XIANGJUN WU et al.Applied surface science. 2011, Vol 257, Num 13, pp 5595-5600, issn 0169-4332, 6 p.Article

UHV reactive sputtering of AlN(0 0 0 1) single crystals on Si(1 1 1) at high temperature by a two-step growth methodMALENGREAU, F; HAGEGE, S; SPORKEN, R et al.Journal of the European Ceramic Society. 1997, Vol 17, Num 15-16, pp 1807-1811, issn 0955-2219Conference Paper

Angular selectivity of the infrared transmittance through obliquely sputter-deposited Ti-oxide-based filmsLE BELLAC, D; NIKLASSON, G. A; GRANQVIST, C. G et al.Thin solid films. 1995, Vol 266, Num 2, pp 94-95, issn 0040-6090Article

Resist pattern reformation by reactive ion etching with Ar+CH₄ gas mixture and its applicationWATANABE, I.Japanese journal of applied physics. 1984, Vol 23, Num 4, pp 487-491, issn 0021-4922, 1Article

Investigation of ionized metal flux fraction in HiPIMS discharges with Ti and Ni targetsKUBART, Iomáš; CADA, Martin; LUNDIN, Daniel et al.Surface & coatings technology. 2014, Vol 238, pp 152-157, issn 0257-8972, 6 p.Article

A study of gas-sensing properties of sputtered α-SnWO₄ thin filmsSOLIS, J. L; LANTTO, V.Sensors and actuators. B, Chemical. 1995, Vol 25, Num 1-3, pp 591-595, issn 0925-4005Conference Paper

THE PREPARATION OF TANTALUM NITRIDE TARGETS BY REACTIVE SPUTTERINGWORMALD MR; UNDERWOOD BY; ALLEN KW et al.1973; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1973; VOL. 107; NO 2; PP. 233-235; BIBL. 6 REF.Serial Issue

PARAMETERS CONTROLLING THE REACTIVE SPUTTER DEPOSITION OF THE HAFNIUM TANTALUM NITRIDE RESISTIVE SEA.KNOLLE WR; BALLAMY WC.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 4; PP. 561-565; BIBL. 8 REF.Article

REACTIVE EVAPORATION.BUNSHAH RF.1974; IN: SCI. TECHNOL. SURF. COATING. NATO ADV. STUDY INST.; LONDON; 1972; LONDON; ACAD. PRESS; DA. 1974; PP. 361-368; BIBL. 16 REF.Conference Paper

Caractérisation de films colorés de Fe-O-N élaborés par pulvérisation magnétron réactive = Characterization of coloured films of Fe-O-N deposited by reactive magnetron sputteringPETITJEAN, C; GRAFOUTE, M; ROUSSELOT, C et al.Matériaux et techniques. 2006, Vol 94, Num 1, pp 23-29, issn 0032-6895, 7 p.Conference Paper

PULVERISATION CATHODIQUE REACTIVE DU SULFURE DE ZINC ACTIVE AU CUIVRE ET AU CHLORE.DURAND S; BUGNET P; DEFORGES J et al.1975; VIDE; FR.; DA. 1975; NO 175; PP. 8-10; ABS. ANGL.; BIBL. 5 REF.Article

The role of the erosion groove during reactive sputter depositionDEPLA, D; STRIJCKMANS, K; DE GRYSE, R et al.Surface & coatings technology. 2014, Vol 258, pp 1011-1015, issn 0257-8972, 5 p.Article

Synthesis and characterization of multi-element oxynitride semiconductor film prepared by reactive sputtering depositionYU, Ruei-Sung; HUANG, Rong-Hsin; LEE, Chih-Ming et al.Applied surface science. 2012, Vol 263, pp 58-61, issn 0169-4332, 4 p.Article

Boundary-free multi-element barrier films by reactive co-sputteringHSIEH, J. H; LI, C; WANG, C. M et al.Surface & coatings technology. 2005, Vol 198, Num 1-3, pp 335-339, issn 0257-8972, 5 p.Conference Paper

Bond switching, Si-H cluster formation and hydrogen effusion upon thermal annealing in hydrogenated amorphous silicon thin filmsRÜTHER, R; LIVINGSTONE, J; DYTLEWSKI, N et al.Thin solid films. 1995, Vol 271, Num 1-2, pp 151-156, issn 0040-6090Article

Simulation of reactive sputtering from a concentric dual-source magnetron in roll-to-roll coating processesTSIOGAS, C. D; AVARITSIOTIS, J. N.Vacuum. 1994, Vol 45, Num 4, pp 473-481, issn 0042-207XConference Paper

Hysteresis effect in reactive sputtering: a problem of system stabilityKADLEC, S; MUSIL, J; VYSKOCIL, H et al.Journal of physics. D, Applied physics (Print). 1986, Vol 19, Num 9, pp L187-L190, issn 0022-3727Article